Dimeric Manganese-Catalyzed Hydroarylation and Hydroalkenylation of Unsaturated Amides

An unprecedented Mn(I)-catalyzed selective hydroarylation and hydroalkenylation of unsaturated amides with commercially available organic boronic acids is reported. Alkenyl boronic acids have been successfully employed for the first time in Mn(I)-catalyzed carbon–carbon bond formation. A wide array of β-alkenylated amide products can be obtained in moderate to good yields, which offers practical access to five- and six-membered lactams. This protocol has predictable regio- and chemoselectivity, excellent functional group compatibility and ease of operation in air, representing a significant step-forward towards manganese-catalyzed C−C coupling.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

Direct Intermediate Regulation Enabled by Sulfur Containers in Working Lithium–Sulfur Batteries

Polysulfide intermediates (PSs), the liquid-phase species of active materials in lithium–sulfur (Li-S) batteries, connect the electrochemical reactions between insulative solid sulfur and lithium sulfide and are key to full exertion of the high-energy-density Li-S system. Herein, the concept of sulfur container additives is proposed for the direct modification on the PSs species. By reversible storage and release of the sulfur species, the container molecule converts small PSs into large organosulfur species. The prototype di(tri)sulfide-polyethylene glycol sulfur container is highly efficient in the reversible PS transformation to multiply affect electrochemical behaviors of sulfur cathodes in terms of liquid-species clustering, reaction kinetics, and solid deposition. The stability and capacity of Li-S cells was thereby enhanced. The sulfur container is a strategy to directly modify PSs, enlightening the precise regulation on Li-S batteries and multi-phase electrochemical systems.     

n(Zn)：n(Ga)比值对合成ZnGa2O4结构及光致发光性能的影响

以ZnO和HGaO₂为原料,用不同配比合成出系列ZnGa₂O₄,并对其晶体结构和发光性能进行了研究。用荧光分光光度计检测了ZnGa₂O₄的激发和发射光谱,用X射线衍射仪检测了ZnGa₂O₄的衍射图谱,用热重差热仪绘制了TGA-DAT曲线。对检测结果分析认为:1.ZnGa₂O₄属于尖晶石结构,稍过量的Zn或Ga能进入ZnGa₂O₄结构中,并对ZnGa₂O₄的晶格常数产生一定影响。2.ZnGa₂O₄存在两个自激发光中心,当Ga稍过量时,自激发光中心是四面体镓氧键[T_d(Ga-O)],最大激发波长约248nm,最大发射波长约367nm;当Zn稍过量时,自激发光中心是八面体镓氧键[O_h(Ga-O)],最大激发波长约270nm,最大发射波长约441nm。当n(Zn):n(Ga)在理论值附近,激发和发射光强度最大,而且光谱峰位发生了红移。3.ZnGa₂O₄的热稳定性能非常好。上述结论对研究ZnGa₂O₄基质或掺杂的发光材料具有一定意义。     

基于模糊集相容性的模糊控制规则优化方法

在简要介绍模糊模型的完备性和相容性的基础上 ,根据模糊集贴近度 ,提出模糊集相容性的概念 ;通过对模糊控制规则表特征的分析 ,进一步完善规则相容性概念及其定量评价方法 ;最后给出模糊控制规则模型自寻优优化方法。仿真结果表明 ,该方法可以大大提高控制系统的控制性能。     

含铱配合物的聚对苯类电磷光聚合物

通过Suzuki聚合法合成了以聚对苯为主链的含铱配合物的电磷光共轭聚合物。部分苯环单元被β-二酮结尾的烷氧基链取代,进而与2-苯基吡啶配位形成悬垂的铱配合物侧链。宽带隙的聚对苯主链使主体与客体的能级匹配,从而有利于能量的转移。铱配合物通过长β-二酮结尾的烷氧基链悬挂在聚对苯的侧链上提高了聚合物的溶解性,有利于器件的制作。另外,由于连在氧原子上的β-二酮具有较大的旋转自由度,增大了β-二酮的反应活性有利于配位反应的进行。聚合物的EL光谱只显示客体铱配合物的发射,主体的发射已被完全猝灭。这表明聚合物主体和铱配合物客体之间发生了有效的能量转移。PPPIrPPy2聚合物发光器件的EL光谱发光波长为525nm,最大外量子效率为2.6%。     

铝互连线的电迁移问题及超深亚微米技术下的挑战

铝互连线的电迁移问题历来是微电子产业的研究热点，其面临的电迁移可靠性挑战也是芯片制造业最持久和最重要的挑战之一.从20世纪90年代开始，超深亚微米(特征尺寸≤0.18 μm)铝互连技术面临了更加复杂的电迁移可靠性问题.从电迁移理论出发，分析概括了铝互连电迁移问题的研究方法，总结了上世纪至今关于铝互连电迁移问题的主要经验；最后结合已知的结论和目前芯片制造业现状，分析了当前超深亚微米铝互连线电迁移可靠性挑战的原因和表现形式，提出了解决这些问题的总方向. 关键词： 电迁移 铝互连 微结构     

用变形全息透镜实现变形分数傅里叶变换

利用一发散点光源和一束倾斜平行光制作出在两个垂直方向上具有不同焦距的变形全息透镜,且用此全息元件实现了变形分数傅里叶变换。变形全息透镜两个方向上的焦距随全息记录条件和再现条件而变化,分析了用这种全息透镜实现变形分数傅里叶变换的条件。实验表明,用该元件能够方便地实现任意级次的变形分数傅里叶变换。     

CsI(Tl)晶体中反冲Cs和I核Quenching?Factor的测量

许多实验对用CsI(Tl)闪烁晶体作为探测器来寻找和探测暗物质的可行性进行了研究.本工作利用8MeV单能中子轰击CsI(Tl)晶体探测器来研究Cs核和I核的QuenchingFactor.在数据处理中,运用脉冲形状甄别(PSD)方法来分辨反冲核信号和本底信号.实验结果表明,在7keV到132keV的能区中,Quench ingFactor随着反冲核能量的减少而增加.在探测暗物质的实验中,这一性质对于CsI(Tl)晶体探测器获得较低的能量阈值是很有利的.     

基于神经网络的三维宽场显微图像复原研究

提出一种利用BP神经网络进行三维宽场显微图像复原的非线性映射方法，将三维图像转化为二维图像进行处理，利用神经网络的学习能力，通过训练，建立含有散焦信息的二维模糊图像与二维清晰图像之间的映射关系，然后对切片堆叠进行逐幅复原，从而实现显微图像的三维复原.得到的复原图像在视觉上和定量分析上都获得了很好的效果.由于采用小规模神经网络，训练时间短，计算量小，使实时复原成为可能.